【摘要】 以轻质柔性聚酰亚胺(PI)材料为衬底,采用低温共蒸发"一步法"工艺制备四元化合物Cu(In,Ga)Se2(CIGS)薄膜。本文采用卷对卷(roll-to-roll)技术,在衬底幅宽300 mm的方向上实现了良好的成膜均匀性。利用XRD和XRF分别分析了所制备薄膜的晶相、组分和厚度,SEM分析了薄膜的表面形貌,讨论了不同衬底温度下制备的CIGS薄膜的性能。更多还原

【Abstract】 The Cu(In,Ga)Se2(CIGS) films were deposited by evaporation using "one-stage process" at low temperature on the polyimide(PI).Film thickness uniformity was accepted for a commercial process with 300 mm-wide substrate by roll-to-roll mass production.The composition and thickness of film were determined by XRF and the phase of the film was identified by XRD respectively.The morphology of GIGS film was characterized by SEM.The influence of substrate temperature was discussed for the performance of CIGS film.更多还原