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Study on the structural,electrical and optical properties of Al-F co-doped ZnO thin films prepared by RF magnetron sputtering

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【作者】 马瑞新王目孔康勃王永刚

【Author】 MA Rui-xin*,WANG Mu-kong2,KANG Bo1,and WANG Yong-gang1 1.Department of Non-Ferrous Metallurgy,University of Science and Technology Beijing,Beijing 100083,China 2.Beijing Hangxing Technology Development CO.,Ltd.,Beijing 100013,China

【机构】 Department of Non-Ferrous Metallurgy,University of Science and Technology BeijingBeijing Hangxing Technology Development CO.,Ltd.

【摘要】 Al and F co-doped ZnO(ZnO:(Al,F)) thin films on glass substrates are prepared by the RF magnetron sputtering with different F doping contents.The structural,electrical and optical properties of the deposited films are sensitive to the F doping content.The X-ray analysis shows that the films are c-axis orientated along the(002) plane with the grain size ranging from 9 nm to 13 nm.Micrographs obtained by the scanning electron microscope(SEM) show a uniform surface.The best films obtained have a resistivity of 2.16×10-3Ω·cm,while the high optical transmission is 92.0% at the F content of 2.46 wt.%.

【Abstract】 Al and F co-doped ZnO(ZnO:(Al,F)) thin films on glass substrates are prepared by the RF magnetron sputtering with different F doping contents.The structural,electrical and optical properties of the deposited films are sensitive to the F doping content.The X-ray analysis shows that the films are c-axis orientated along the(002) plane with the grain size ranging from 9 nm to 13 nm.Micrographs obtained by the scanning electron microscope(SEM) show a uniform surface.The best films obtained have a resistivity of 2.16×10-3Ω·cm,while the high optical transmission is 92.0% at the F content of 2.46 wt.%.

  • 【文献出处】 Optoelectronics Letters ,光电子快报(英文版) , 编辑部邮箱 ,2011年01期
  • 【分类号】TN304.21
  • 【被引频次】10
  • 【下载频次】100
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