【摘要】 采用等离子体增强化学气相淀积系统,应用原位氧化和原位掺杂技术制备出了以非晶硅/二氧化硅多层膜结构为本征i层、分别以磷和硼掺杂的非晶硅作为n型和p型区的p-i-n结构。经过三步后退火处理,i层晶化得到纳米硅/二氧化硅多层膜结构,磷和硼掺杂的非晶硅结晶形成多晶硅结构。衬底采用轻和重掺杂两种不同浓度的p型单晶硅。重掺杂衬底上的p-i-n结构的电致发光特性比轻掺杂的具有更低的开启电压和更高的发光强度和效率。根据载流子的输运机制分析,重掺杂的p+硅衬底一方面有效的降低了载流子的隧穿势垒,提高了载流子的有效注入效率,进而提高了电致发光强度和效率;另一方面,重掺杂衬底也降低了器件的总串联电阻,是器件开启电压降低的主要原因。更多还原

【Abstract】 p-i-n structure was prepared in plasma enhanced chemical vapour deposition system applying the in situ oxidization and doping technologies,with nc-Si/SiO₂ multilayers as the intrinsic layer,P-doped and B-doped a-Si as the n and p regions.Heavily and lightly doped p type single crystal silicon wafers as substrates.The heavily doped p+ silicon lowered the tunnelling barrier for carriers,especially for holes,increasing effective carrier injection efficiency,providing more holes to participate in the recombination,and then increasing electroluminescence efficiency effectively;On the other hand,the heavily doped substrate decreased the whole series resistance,lowering the turn-on voltage from 5V to 3V.The above two factors make the electroluminescence property of the device on the heavily doped substrate better than that on lightly doped p type substrate.更多还原