【摘要】 超结MOSFET具有优越的静态直流特性。在已有成功设计600 V超结VDMOS经验的基础上,提出了相应的工艺方法。利用TCAD仿真软件,对主要的工艺参数和器件电学参数进行仿真优化,得到击穿电压为929 V、比导通电阻为23.67 m Ω·cm2的超结VDMOS。更多还原

【Abstract】 Super junction MOSFET has been proved to have excellent static DC characteristics.A fabrication method for super junction MOSFET was proposed based on the design of a 600 V super junction VDMOS.Main process parameters and electrical parameters of the device were simulated and optimized by TCAD simulator,and super junction VDMOS transistors with a breakdown voltage of 929 V and a specific on-resistance of 23.67 mΩ·cm-2 were fabricated.更多还原