【摘要】 为了增强器件高温条件下的适应性,对4H-SiC双层浮结肖特基势垒功率二极管的温度特性进行了研究。结果表明,当温度变化时,器件的阻断电压、通态电阻、反向漏电流及开关时间等电学性质均要发生一定的变化。作为一种基于浮结技术的SiC新器件,通过数值模拟方法对其特征参数进行优化,可使其承载电流能力、阻断特性和开关速度等得到进一步的改善。更多还原

【Abstract】 Temperature properties of 4H-SiC doubled-floating junction Schottky barrier diodes were studied to enhance the adaptability of devices at high temperatures.It has been shown that some electrical characteristics,such as blocking voltage,on-state resistance,reverse leakage current density and switching time,varied with changing temperature.As a new SiC device based on floating layers buried in drift region,its current load capability,blocking features and switching rate could be improved by optimizing electric parameters using numerical simulation method.更多还原