【摘要】 半导体量子点的激子超辐射出现的条件是本文激子超辐射的理论研究中的重点,我们的理论推导结果揭示要观测到半导体量子点的激子超辐射必须采用短于百飞秒的激发源。我们用ZnO单量子点观察到激子超辐射,同时测量和分析讨论了量子点集合的相干辐射性质,发现单量子点超辐射的二次方泵浦与辐射强度关系被大量量子点间的线性递增所掩盖。更多还原

【Abstract】 In semiconductor quantum dots,coherent radiation of excitons includes lasing and superradiance.In this paper,we report the theory of superradiance of excitons in quantum dot.Our results reveal that the excited source for superradiance of excitons in single quantum dot should be shorter than 100 fs.Furthermore,we report our experimental observation of superradiance in a single ZnO quantum dot.While,for the nano-crystal assemble,the exponential increasing of emission peak intensity with the pump density will be covered by the linear relationship between nano-crystals in assemble.更多还原