【摘要】 应用ATLAS模拟软件,设计了吸收层与倍增层分离的（SAM）4H-SiC雪崩光电探测器（APD）结构。分析了不同外延层厚度和掺杂浓度对器件光谱响应的影响,对倍增层参数进行优化模拟,得出倍增层的最优化厚度为0.26μm,掺杂浓度为9.0×10¹⁷cm^-3。模拟分析了该APD的反向Ⅳ特性、光增益、不同偏压下的光谱响应和探测率等,结果显示该APD在较低的击穿电压-66.4 V下可获得较高的倍增因子10⁵;在0 V偏压下峰值响应波长（250 nm）处的响应度为0.11A/W,相应的量子效率为58%;临近击穿电压时,紫外可见比仍可达1.5×10³;其归一化探测率最大可达1.5×10¹⁶cmHz^1/2W^-1。结果显示该APD具有较好的紫外探测性能。更多还原

【Abstract】 A separate absorption and multiplication（SAM） 4H-SiC avalanche photodiode（APD） was designed by using the simulation software of ATLAS.The influences of various thicknesses and doping concentrations of epitaxial layers on spectral response were analysed,and the parameters of multiplication layer were optimal simulated.Then the optimal thickness of 0.26μm and doping concentration of 9.0×10¹⁷ cm^-3 for multiplication layer were obtained.The simulation results showed that the APD exhibited low breakdown voltage of -66.4 V with high gain of 10⁵.At the bias of 0 V,the peak responsivity was about 0.11 A/W and the corresponding quantum efficiency was 58%.The UV-to-visible rejection ratio of 1.5×10³ close to the breakdown voltage and the maximum spectral detectivity about 1.5×10¹⁶ cmHz^1/2W^-1 were also achieved.The above results indicated that the APD had a good performance for UV signal detection.更多还原