【摘要】 通过正交实验设计,对Ga掺杂ZnO导电粉的制备工艺进行优化,确定出其最优参数为:掺杂比2mol%,反应温度85℃,反应时间10 h,煅烧温度550℃。利用XRD、SEM和XPS对样品的性能进行检测,结果表明,按此条件制备的掺杂样品,经测量其电阻率为3.3×104Ω.cm。更多还原

【Abstract】 The optimum treatment conditions were got by using the orthogonal experimental design,confirmed that doping ratio for 2mol%,reaction temperature for 85 ℃,reaction time for 10 h,the calcining temperature for 550 ℃.XRD,SEM,and XPS were used to characterize the synthesized ZnO particl.It was found that the volume resistivity of the zinc oxide decreases to 3.3×104 Ω·cm更多还原