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新型双吸收层光探测器量子效率的理论分析

Theoretical Analysis of Quantum Efficiency of Novel Dual-Absorption Photodetector

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【作者】 谢三先黄永清刘庆段小峰王伟黄辉任晓敏

【Author】 Xie Sanxian Huang Yongqing Liu Qing Duan Xiaofeng Wang Wei Huang Hui Ren Xiaomin(Key Laboratory of Information Photonics & Optical Communications, Ministry of Education,Beijing University of Posts and Telecommunications, Beijing 100876, China)

【机构】 北京邮电大学信息光子学与光通信教育部重点实验室

【摘要】 随着光纤通信技术的发展,高量子效率、高速响应光电探测器在长距离高速光纤通信系统中的作用尤显突出。利用传输矩阵法(TMM)对新型双吸收层光电探测器(RCE-PINIP)的量子效率进行了理论计算,然后对其进行了相应的理论仿真。结果显示,在50~800nm厚度范围内,随着双吸收层厚度逐渐变大,RCE-PINIP模型的量子效率会出现多个峰值,量子效率的峰值先增大到最大值,在两个单吸收层厚度同为325nm时,量子效率达到98.6%,然后峰值逐渐递减。在两个单吸收层厚度分别固定为325nm时,量子效率随另一个单吸收层厚度的变化关系几乎相同。针对这个RCE-PINIP模型结构,通过对两个单吸收层厚度分别进行优化,得到了一个能实现高量子效率的优化结构模型。

【Abstract】 With the development of optical fiber communication technologies, high quantum efficiency and high speed photodetectors are more and more essential for long-hual high-bit-rate optical communication systems. The quantum efficiency (QE) of novel dual-absorption resonant cavity enhanced photodetector (RCE-PINIP) is calculated theoretically using transfer matrix method (TMM) and the results are simulated. It is revealed that with the gradual increase of dual-absorption layer thickness in the 50~800nm range, there will emerge several QE peaks for this RCE-PINIP structure model. And the QE peak firstly increases to the highest value (98.6%) when the thickness of two single absorption layers is both 325nm, and then the peak gradually decreases. When the thickness of two single absorption layers is fixed at 325nm respectively, dependences of QE on the thickness of other single absorption layer are almost the same. So for this RCE-PINIP model structure, after the optimizations on the thickness of both single absorption layer thickness, an optimized structure which can achieve high QE is obtained.

【基金】 国家973计划(2010CB327600);国家863计划(2009AA03Z405,2009AA03Z417);111计划(B07005);国际科技合作重点计划项目(2006DFBllll0);新世纪优秀人才支持计划(NCET-08-0736);长江学者和创新团队发展计划(IRT0609);中央高校基本科研业务费专项资金(BUPT2009RC0409,BUPT2009RC0410)资助课题
  • 【文献出处】 激光与光电子学进展 ,Laser & Optoelectronics Progress , 编辑部邮箱 ,2011年05期
  • 【分类号】TN36
  • 【被引频次】3
  • 【下载频次】117
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