【摘要】 为了解决LED驱动芯片因耐压低而在高压领域应用受限制的问题,将绝缘体上硅(SOI)技术应用到LED驱动的设计中,设计了一款基于SOI工艺的高压LED驱动芯片。首先提出了该驱动的系统框图,并介绍了其工作原理,然后对各重要模块进行了详细的介绍。该LED驱动输入电压范围为40 V～625 V,采用峰值电流模式控制,并提供线性与脉宽调制(PWM)两种调光方式,根据不同应用,外接的LED灯可达十几至上百个不等。采用XFAB 1μm SOI工艺,并使用Cadence的Spectre系列软件进行了仿真。仿真与测试结果验证了该驱动的良好性能。该设计对基于SOI工艺的高压电源管理芯片的设计具有指导意义。更多还原

【Abstract】 In order to expand the application of LED driver into high-voltage region,the silicon-on-insulator(SOI) technology was used.Based on this technology,an LED driver was designed.The system diagram of the LED driver was introduced at first and then the important blocks were described in detail.This LED driver works in peak current mode,and has a wide input range from 40 V to 625 V.It provides two dimming functions: linear dimming and pulse width modulation(PWM) dimming,and could be used in tens to a hundred series LED applications.The prototype chip was designed by Cadence Spectre tools and fabricated in XFAB 1 μm SOI Process.The simulation and test results verify this design.This research lays the foundation for the design of the high-voltage power management chips which are based on SOI process.更多还原