【摘要】 本文采用Win公司2μm GaAs HBT工艺设计一种高效率射频E类功率放大器。设计中采用了电压偏置的E类功放结构,通过负载牵引(Load-Pull)技术对放大器的效率、增益和输出功率进行折衷和优化设计。仿真结果表明该放大器在5V电源电压下,工作频段700MHz～1100MHz内功率附加效率(PAE)大于50%,增益15dB,输出功率大于20dBm。芯片面积为1.375mm*0.79mm。更多还原

【Abstract】 This paper implemented a class E power amplifier with 2 um GaAs HBT technology from Win semiconductor.The design adopted the voltage-biased structure.With the load-pull technique,trade-off design and optimization of PA’s efficiency,gain and output power are obtained.The stimulations result indicated that it gives the 50% of PAE and the 15dB of gain with the output power of 20dBm from the working frequency band of 700MHz～1100MHz.The area of chip is 1.375mm0.79mm.更多还原