【摘要】 本文介绍采用直接检测LDMOS漏端电压来判断其是否过流的设计方法,给出了电路结构。通过电路分析,并利用BCD高压工艺,在cadence环境下进行电路仿真验证。结果证明:该方法能够快速、实时地实现过流保护功能,相比其它方法,在功耗、效率、工艺兼容性、成本等方面均有很大提高,可以直接应用于电源控制芯片中的安全保护设计。更多还原

【Abstract】 This paper proposes a method to determine if the LDMOS is overcurrent by detecting the drain voltage of LDMOS directly and also designs its circuit structure. Through the circuit analysis run in cadence using BCD high voltage process, this method shows that it can protect the IC from overcurrent problem faster than the existing methods. This method introduced in this paper also shows advances in power consumption, efficiency, process compatibility and the cost compared to traditional current detecting methods, which makes it suitable to be used in power control ICs directly.更多还原