【摘要】 氧化钒薄膜的高电阻温度系数(TCR)是制作高灵敏度非制冷红外探测器的一个极其重要的参量。探测器的响应率与TCR紧密相关。高TCR将提升红外探测器的探测性能。鉴于氧化钒薄膜TCR的重要性,综述了近几年国内外研究中制备高TCR氧化钒薄膜的新技术并分类归纳:包括离子束增强沉积(IBED)法,反应脉冲激光沉积技术等。由于氧化钒薄膜具有VO2、VO5等多种价态结构,不同的制备条件和方法所生成的氧化钒薄膜TCR大小也不同,因此,分析了相关技术方法的优缺点,并对高TCR进行了一定的理论解释。更多还原

【Abstract】 High temperature coefficient of resistance(TCR) of vanadium oxide thin film is a great important parameter in the fabrication process of high sensitive uncooled infrared detectors.The responsivity of detectors is closely related to TCR.The performance of infrared detectors can be enhanced with sensitive thin films of high TCR.Owing to the importance of TCR of vanadium oxide thin film,the worldwide researches to improve technical approaches that fabricate vanadium oxide thin film of high TCR in recent years were reviewed.These technologies included ion beam enhanced deposition,reactive pulsed laser deposition,and so on.Because of different V-O valence configurations such as VO2,VO5,in vanadium oxide films,different preparation conditions and methods would cause different TCR of vanadium oxide films.Therefore,the advantages and disadvantages of the related technical approaches were analyzed and theoretical explanations on high TCR were presented.更多还原