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双面硅多条探测器的测试

Test of Double-sided Multi-strip Silicon Detectors

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【作者】 李占奎巩伟谭继廉魏计房王柱生韩励想田大宇于民王金延张录

【Author】 LI Zhan-kui1,1),GONG Wei1,2,TAN Ji-lian1,WEI Ji-fang1,2,WANG Zhu-sheng1,HAN Li-xiang1,TIAN Da-yu3,YU Min3,WANG Jin-yan3,ZHANG Lu3 (1 Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China;2 Graduate University of Chinese Academy of Sciences,Beijing 100049,China;3 Institute of Microelectronics of Peking University,Beijing 100871,China)

【机构】 中国科学院近代物理研究所中国科学院研究生院北京大学微电子研究院

【摘要】 介绍了由中国科学院近代物理研究所和北京大学微电子研究院联合研制的双面硅多条探测器的初步测试过程及测试结果。测试内容包括:探测器的电特性、能量分辨率、二维能谱、条间串扰(crosstalk)。在-25 V全耗尽偏压下,各条的反向漏电流均小于10 nA,对于5.486 MeV的α粒子,正面各条的能力分辨率在1.5%左右,条间串扰在6%左右;背面各条能量分辨率稍差,在3%左右,其条间串扰在1%左右。同时对进口的Micron BB1直流耦合单边读出的双面硅条探测器做了相同测试,并进行了性能对比。

【Abstract】 The testing of a doubled-sided multi-strip silicon detector manufactured by Institute of Modern Physics of CAS and Peking University were introduced.The electrical characteristics and energy resolution,two-dimensional spectrum,crosstalk were presented.The reverse leak current of each strip is smaller than 10 nA under bias voltage of 25 V.The energy resolution of strips on the front side is about 1.5%,but a little worse for the backside strips,about 3%.The level of crosstalk is about 6% for the front side,1% for the backside.Same tests were carried out on the commercial Micron BB1 detector and a comparison was presented.

【基金】 中国科学院知识创新工程重大项目(KJCX3-SYW-No5)~~
  • 【文献出处】 原子核物理评论 ,Nuclear Physics Review , 编辑部邮箱 ,2011年03期
  • 【分类号】O572.212
  • 【被引频次】4
  • 【下载频次】199
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