【摘要】 通过激光脉冲沉积法(PLD)在Si衬底上沉积了双钙钛矿结构La2NiMnO6(LNMO)薄膜。用HP4284A LCR仪等分析测试手段研究了薄膜异质结的电流-电压特性和电容-电压特性。结果表明La2NiMnO6/Si异质结也表现出了与传统相似的p-n整流特性。更多还原

【Abstract】 La2NiMnO6 thin films were prepared by pulsed laser deposition(PLD) on the Si(100) substrate.The characteristics of the current-voltage(I-V) and the capacitance-voltage(C-V) of the La2NiMnO6 thin films heterostructure were analyzed by HP4284A LCR meter and other instruments.The results showed that the La2NiMnO6/Si heterojunction had typical rectification characteristics just like the traditional p-n junction.更多还原