【摘要】 采用射频磁控反应溅射,利用两步气压法在Pt电极上制备C轴倾斜的A1N压电薄膜.用X射线衍射仪(XRD)分析两步气压下制备的A1N薄膜的择优取向,用扫描电镜(SEM)观察薄膜的截面形貌.实验结果表明在优化工艺参数条件下制备的AlN薄膜为C轴倾斜的柱状晶,且柱状晶与C轴的倾斜角度达到5°.并且初步探讨两步气压法制备C轴倾斜AlN薄膜的生长机理.更多还原

【Abstract】 C-axis inclined AlN piezoelectric films based on Pt electrode were prepared by two-step pressure method in RF magnetron sputtering system.The preferred orientation and cross-section morphology of the AlN films prepared under different conditions were characterized by X-ray diffraction(XRD) and scanning electron microscopy(SEM) respectively.The results showed that the high C-axis inclined AlN films prepared under optimized parameters had inclined columnar structure up to 5°.The growth mechanism of C-axis inclined AlN films under two-step pressure method was discussed.更多还原