节点文献

Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 周鹏廖常俊魏政军李淳飞袁书琼

【Author】 Peng Zhou1,Changjun Liao2,Zhengjun Wei2,Chunfei Li1,and Shuqiong Yuan2 1 Department of Physics,Harbin Institute of Technology,Harbin 150001,China 2 Lab of Photonic Information Technology,School for Information and Optoelectronic Science and Engineering,South China Normal University,Guangzhou 510631,China

【机构】 Department of Physics,Harbin Institute of TechnologyLab of Photonic Information Technology,School for Information and Optoelectronic Science and Engineering,South China Normal University

【摘要】 We examine the saturation of relative current gain of In0.53 Ga0.47As/InP single photon avalanche diodes(SPADs) operated in Geiger mode.The punch-through voltage and breakdown voltage of the SPADs can be measured using a simple and accurate method.The analysis method is temperature-independent and can be applied to most SPADs.

【Abstract】 We examine the saturation of relative current gain of In0.53 Ga0.47As/InP single photon avalanche diodes(SPADs) operated in Geiger mode.The punch-through voltage and breakdown voltage of the SPADs can be measured using a simple and accurate method.The analysis method is temperature-independent and can be applied to most SPADs.

【基金】 supported by the National Basic Research Program (973 Program) of China (Nos.G2001039302 and 007CB307001);the Guangdong Key Technologies R&D Program (No.2007B010400009)
  • 【文献出处】 Chinese Optics Letters ,中国光学快报(英文版) , 编辑部邮箱 ,2011年01期
  • 【分类号】O472.4
  • 【被引频次】2
  • 【下载频次】62
节点文献中: 

本文链接的文献网络图示:

本文的引文网络