【摘要】 用沟槽和离子注入方法在自主外延的4H导通型碳化硅晶圆上研制了垂直沟道结型场效应晶体管(VJFET)。在栅电压VG=-10 V时阻断电压达到1 200 V;在VG=2.5 V,VD=2V时的电流密度为395 A/cm2,相应的比导通电阻为5.06 mΩ·cm2。分析发现欧姆接触电阻是导通电阻的重要组成部分,改善欧姆接触可以进一步降低导通电阻。更多还原

【Abstract】 A vertical channel junction field effect transistor(VJFET) was fabricated based on in-house SiC epitaxy with trenched and implanted method.Its blocking voltage is up to 1 200 V at gate bias VG=-10 V and drain current density is 395 A/cm2 at VG=2.5 V and VD=2 V,with related specific on-resistance 5.06 mΩ·cm2.Further analysis reveals that the on-resistance depends greatly on ohmic contact resistance.The specific on-resistance can be further reduced by improving ohmic contact.更多还原