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退火温度对Eu3+掺杂TiO2-SiO2复合薄膜的发光影响

Effect of Temperature on the Photoluminescence of Eu3+ Doped TiO2-SiO2 Composite Films

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【作者】 赵建果赵阿可谢二庆张伟英刘照军

【Author】 ZHAO Jian-guo1,2,XIE Er-qing2,ZHANG Wei-ying1,LIU Zhao-jun1(1.College of Physics and Electronic Information,Luoyang Normal College,Luoyang,471022,P R China 2.College of Physical Science and Technology,Lanzhou University,Lanzhou 730000,P R China)

【机构】 洛阳师范学院物理与电子信息学院兰州大学物理科学与技术学院

【摘要】 用溶胶-凝胶法制备了Eu3+离子掺杂的TiO2-SiO2复合薄膜并研究了退火温度对复合薄膜的光致发光的影响。并采用XRD、Raman和光致发光谱对其进行了一系列的表征。在退火温度为700℃的时候,Eu3+离子引起的发光强度是最强的,而随着退火温度的升高由TiO2本身的Ti3+离子缺陷能级引起的在近红外820nm处的发光峰的强度变得越来越强,一方面是因为随着退火温度的升高Ti3+离子增多,即缺陷能级数量增多,另一方面是Eu3+离子的能量背传递给Ti3+离子缺陷能级,这两个原因导致820nm处的发光峰强度随退火温度而增强。

【Abstract】 Eu3+ ions doped TiO2-SiO2 composite thin films with different annealing temperature were fabricated by sol-gel method.The crystal structure and luminescence properties of the resulting nanofibers were separately investigated by X-ray diffraction(XRD),Raman,Fourier Transform Infrared Spectra(FTIR) and photoluminescence(PL) spectra.The intensity of visible emission due to Eu3+ ions reaches maximum when annealing temperature is at 700℃.The intensity of the infrared emission at 820nm due to the defect states associated with Ti3+ ions increases with the annealing temperature increasing.On one hand,the number of Ti3+ ions increases with the annealing temperature increasing,which causes the increase of defect levels;on the other hand,the energy back transfers from Eu3+ ions to defect level associated with Ti3+ ions.These two facts lead to the increase of the emission intensity at 820nm with the annealing temperature increasing.

【基金】 河南省科技攻关项目(102102210448,102102210452);洛阳师范学院博士基金(10000887);河南省教育厅自然科学研究计划项目(2010A140011)
  • 【文献出处】 功能材料与器件学报 ,Journal of Functional Materials and Devices , 编辑部邮箱 ,2011年04期
  • 【分类号】TB43
  • 【被引频次】2
  • 【下载频次】126
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