【摘要】 采用脉冲激光沉积(PLD)技术,分别在LaA lO3(LAO)、(La,Sr)(A l,Ta)O3(LAST)及SrTiO3(STO)三种不同的单晶衬底上制备了一系列无铅(Na1-xKx)0.5B i0.5TiO3(x=0.00,0.08,0.19,0.30,NKBT)铁电薄膜材料。利用X射线衍射(XRD)仪对薄膜结构进行了分析,结果表明在单晶平衬底上生长的薄膜都是单取向生长的外延膜,其中摇摆曲线的半高宽(FWHM)显示在(La,Sr)(A l,Ta)O3单晶衬底上生长的薄膜结晶质量最好。另外,在20°倾斜的(La,Sr)(A l,Ta)O3单晶衬底上生长的(Na1-xKx)0.5B i0.5TiO3铁电薄膜中还首次观察到了激光感生热电电压(LITV)信号。发现在能量为0.48mJ/pulse的紫外脉冲激光辐照下,其最大激光感生热电电压为31mV,完全满足了制作脉冲激光能量计探测元件的要求,有望开发出可集成的新型脉冲激光能量计。更多还原

【Abstract】 Using pulse laser deposition(PLD) technology,a series of lead-free(Na1-xKx)0.5Bi0.5TiO3 ferroelectric films were fabricated on LaAlO3(LAO),(La,Sr)(Al,Ta)O3(LAST) and SrTiO3(STO) monocrystalline substrates,respectively.The structure of thin films was analyzed by X-ray diffraction(XRD).The results show that the thin films growing on flat monocrystalline substrates are all epitaxial.The full wave at half maximum(FWHM) of rocking curve indicates that the crystallinity of thin films growing on(La,Sr)(Al,Ta)O3 monocrystalline substrates is the best.In addition,laser induced thermoelectric voltage(LITV) signals were observed for the first time in(Na1-xKx)0.5Bi0.5TiO3 ferroelectric films growing on 20° vicinal-cut(La,Sr)(Al,Ta)O3 monocrystalline substrates.The maximum LITV of(Na1-xKx)0.5Bi0.5TiO3 ferroelectric films is 31mV under UV light irradiation of 0.48mJ/pulse,which fully satisfies the requirement for pulse laser energy detector.Integrated new-style pulse laser energy detector will probably be exploited.更多还原