【摘要】 采用ZnO、Al2O3(2.5%(质量分数))靶材,真空腔温度保持在40℃左右,运用电子束蒸发法制得系列的ZnO∶Al(ZAO)薄膜。通过X射线衍射(XRD)、光学显微镜、紫外-可见近红外光谱仪、四探针测试仪等仪器对薄膜进行了测定。薄膜呈c轴择优取向的六角纤锌矿结构;具有致密平滑的表面形貌;最佳工艺下样品在702nm波长处透过率达90%;最低电阻率为1.7×10-3Ω.cm。更多还原

【Abstract】 ZAO films were prepared on glass at 40℃ by electron beam evaporation with Al-doped zinc oxide.The technology of electron beam evaporation is easytomachine,low-priced.The properties of the films were investigated by X-ray diffraction spectrometer,optical microscopy,UV-Vis-NIR spectrophotometer and four-probe meter.The results showed that all films are fairly smooth and compact,and have the six angle wurtzite structure with c-axis as the preferential growth orientation.In the visible area,the lowest resistivity of the films prepared at 40℃ is 1.7×10-3Ω·cm,and the max of the transmissivity is about 90%.更多还原