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ZnO纳米棒阵列膜的制备及其光电化学性能研究

Fabrication of ZnO nanorod array films and their photoelectrochemical performance

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【作者】 王海锋王树林蹇敦亮陈海燕丁浩冉

【Author】 WANG Hai-feng1,WANG Shu-lin2,JIAN Dun-liang2,CHEN Hai-yan1,DING Hao-ran1(1.School of Energy and Power Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China; 2.School of Materials Science and Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China)

【机构】 上海理工大学能源与动力工程学院上海理工大学材料科学与工程学院

【摘要】 采用化学溶液沉积法,在ZnO纳米颗粒膜修饰的FTO导电玻璃基底上,制备了ZnO纳米棒阵列。用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、透射电子显微镜(TEM)对样品进行表征。研究结果表明所制备的ZnO纳米棒为六方纤锌矿相单晶结构,沿c轴择优取向生长,平均直径约为40nm,长度约为900nm;ZnO纳米棒阵列生长致密,取向性较一致。以曙红Y敏化的ZnO纳米棒阵列膜为光阳极制作了染料敏化太阳能电池原型器件,在光照强度为100mW/cm2下,其开路电压为0.418V,短路电流为0.889mA/cm2,总的光电转换效率为0.133%。

【Abstract】 ZnO nanorod arrays were prepared by chemical solution deposition on pre-modified FTO substrate with ZnO nanoparticles.X-ray diffraction(XRD),field emission scanning electron microscopy(FESEM) and transmission electron microscopy(TEM) were used to characterize the ZnO nanorod arrays.The as-prepared ZnO nanorods are hexagonal wurtzite single-crystalline structure and grow along c-axis.The individual ZnO nanorod is about 40nm wide and 900nm long.The nanorod arrays are dense arranged and consistent oriented.Using the ZnO nanorods array film sensitized by eosin Y as the photoelectrode,we fabricated dye-sensitized solar cell device,which exhibits an open-circuit photovoltage of 0.418V,a short-circuit photocurrent density of 0.889mA/cm2,and an overall conversation efficiency of 0.133% under an AM-1.5 illumination at 100mW/cm2.

【基金】 国家自然科学基金资助项目(50575147);上海市教委重点资助项目(J50503);上海市纳米专项资助项目(1052nm02900)
  • 【文献出处】 功能材料 ,Journal of Functional Materials , 编辑部邮箱 ,2011年08期
  • 【分类号】O472;TM914.4
  • 【被引频次】3
  • 【下载频次】331
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