【摘要】 采用电子束沉积技术生长W掺ZnO(WZO,ZnO:W)透明导电氧化物(TCO)薄膜(即WZO-TCO薄膜)并研究了衬底温度(100～350℃)对薄膜微观结构、表面形貌以及光电性能的影响。实验表明,随着衬底温度的升高,薄膜的晶体质量取得明显改善(从非晶化状态转变到结晶状态),生长的WZO薄膜呈现c轴择优取向[即(002)晶面]的六角纤锌矿结构。提高衬底温度后,薄膜的光电性能得到了显著改善。霍尔(Hall)迁移率随着衬底温度增加而单调升高,从100℃时的0.1cm2.V-1.s-1提高到350℃时的15.4cm2.V-1.s-1。在衬底温度200℃时获得WZO薄膜最低电阻率2.6×10-3Ω.cm。实验结果还表明,在350℃条件下获得的WZO薄膜性能相对较好,其典型Hall迁移率为15.4cm2.V-1.s-1,载流子浓度为1.2×1020 cm-3,可见光和近红外区域内的平均透过率为82.27%(含2mm玻璃衬底)。更多还原

【Abstract】 Highly conducting and transparent tungsten-doped ZnO thin films grown at different substrate temperatures were obtained via reactive electron beam vapor deposition,and the micro-structural,optical and electrical properties of these WZO thin films were investigated.The experimental results indicate that the micro-structural properties of WZO thin films are improved with increasing the substrate temperature from 100 ℃ to 350 ℃.The WZO thin films deposited from 200 ℃ to 350 ℃ exhibit the hexagonal wurtzite structure and a preferred c-axis(002) crystal orientation perpendicular to the substrates.The Hall mobilities of these deposited thin films increase monotonously from 0.1 cm2·V-1s-1 to 15.4 cm2·V-1·s-1 with the increasing of substrate temperatures from 100 ℃ to 350 ℃.The lowest resistivity of WZO thin film,2.6×10-3 Ωcm,is obtained at 200 ℃.Among these WZO thin films,the optimum electrical and optical properties are successfully received at 350 ℃ with a high Hall mobility of 15.4 cm2·V-1·s-1,a carrier concentration of 1.2×1020 cm-3,and the average transmittance of 82.27% in the visible and near infrared regions(including 2 mm glass substrate).更多还原