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有机场效应晶体管输出特性的衰变与恢复
Degradation and recovery for output characteristics of OFETs
【摘要】 制作了以并五苯作为有源层的有机场效应晶体管(OFETs)。实验观察表明,在原位条件下,器件有很好的输出特性曲线;但在空气中放置3个月后,输出特性曲线明显衰退,并且关态电流增大;为恢复器件性能,在真空条件下,对器件进行加热处理。实验结果表明,经过热处理的晶体管输出特性极大改善。因此,真空热处理可以使衰退器件的输出特性得到恢复。
【Abstract】 Organic field-effect transistors(OFETs) using pentacene as channel material were fabricated.Experiments show that the devices present excellent output characteristics measured in situ,while the output characteristics will degrade obviously and the current of source and drain increases significantly when the devices are exposured in air for three months.In order to recovery device performance,the heating treatment was performed in vacuum.The results indicate that the output characteristics of OFETs through heating are improved greatly.Therefore,it is a good way to recovery output performance of OFETs by taking the heating treatment in vacuum.
【Key words】 organic field-effect transistors(OFETs); pentacene; output characteristics; degradation; recovery;
- 【文献出处】 光电子.激光 ,Journal of Optoelectronics.Laser , 编辑部邮箱 ,2011年07期
- 【分类号】TN386
- 【被引频次】2
- 【下载频次】144