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高压高功率VHF-PECVD的微晶硅薄膜高速沉积
High rate deposition of microcrystalline silicon thin films by VHF-PECVD
【摘要】 采用高压高功率(hphP)甚高频等离子体强强化学气相沉积(VHF-PECVD)法对微晶硅(μc-Si:H)进行高速沉积,在最优沉积条件参数下对hphP和低压低功率(lplP)两组样品沉积速率、光电导、暗电导及光敏性等性能参数进行测试,得到了1.58 nm/s的较高沉积速率、光电性能优秀和更适合薄膜太阳能电池的μc-Si:H薄膜材料。
【Abstract】 Microcrystalline silicon(μc-Si:H) is commonly regarded as the next generation material for Si-based thin film solar cell.In this paper,we achieved high rate deposition of microcrystalline silicon thin films by VHF-PECVD working at high pressure and high power(hphP).Determine the best deposition parameters.Under these deposition parameters,the hphP films showed better optical and electrical properties.The deposition rate,photoconductivity dark conductivity,photosensitivity were tested.The result showed that we got a way of depositing microcrystalline silicon thin films which is more suitable for manufacturing the solar cells with outstanding optical and electrical properties.And the deposition rate is 15.8 nm/s.
【Key words】 microcrystalline silicon(μc-Si:H) thin film; high pressure and high power(hphP) VHF-PECVD; high rate deposition;
- 【文献出处】 光电子.激光 ,Journal of Optoelectronics.Laser , 编辑部邮箱 ,2011年05期
- 【分类号】O484.1
- 【被引频次】2
- 【下载频次】157