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应用高压高功率的微晶硅薄膜高速沉积
High rate deposition of microcrystalline silicon thin films under high pressure and high power
【摘要】 应用高压高功率(hphP)甚高频等离子增强化学气相沉积(VHF-PECVD)法对微晶硅(μc-Si:H)进行高速沉积,确定了hphP VHF-PECVD法沉积μc-Si:H的最优条件参数,在此参数下对hphP和低压低功率(lplP)两组样品沉积速率、光电导、暗电导及光敏性等性能参数进行测试,得到了1.58 nm的较高沉积速率、光电性能优秀和更适合应用在薄膜太阳能电池生产上的μc-Si:H薄膜材料。
【Abstract】 In this paper,the high rate deposition of microcrystalline silicon thin films is achieved by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD) working at high pressure and high power(HPHP).The best deposition parameters are determined.Under these deposition parameters,the HPHP films show better optical and electrical properties.The deposition rate,photo-conductivity,dark conductivity and photo-sensitivity are tested.The results show that the way of depositing microcrystalline silicon thin films is more suitable for manufacturing the solar cells with outstanding optical and electrical properties.And the deposition rate is 1.58 ns.
【Key words】 microcrystalline silicon(μc-Si:H) thin film; high pressure and high power(hphP) VHF-PECVD; high rate deposition;
- 【文献出处】 光电子.激光 ,Journal of Optoelectronics.Laser , 编辑部邮箱 ,2011年04期
- 【分类号】TM914.42
- 【下载频次】85