【摘要】 利用电子束反应沉积技术制备了高迁移率In2O3基W-Mo共掺(IMWO,In2O3:WO3/MoO3)薄膜,研究了不同等量WO3-MoO3掺杂浓度对薄膜的微观结构、光学性能和电学性能的影响。IMWO薄膜的表面形貌呈现"类金字塔"型。随着WO3-MoO3共掺量的增加,IMWO薄膜的电阻率依次下降,载流子浓度逐渐增加,在共掺量为1.0%时制得相对较高电子迁移率的薄膜,电子迁移率约为45.5 cm2.V-1.s-1,电阻率约为3.66×10-4Ω.cm,电子的载流子浓度约为3.74×1020cm-3,方块电阻约为22.88Ω/□,400~1 100 nm光谱区域内的平均透过率约为76%(含玻璃衬底,即glass/IMWO薄膜)。更多还原

【Abstract】 Structural,optical and electrical properties of tungsten(W) and molybdenum(Mo) co-doped indium oxide(IMWO) films prepared by electron beam deposition technique with different WO3-MoO3 co-doped concentrations are investigated in detail.The IMWO thin films present pyramid-like surface.With the co-doped concentration increasing,the resistivity and carrier concentration become better.The lowest resistivity ρ~3.66×10-4 Ω·cm is obtained at the co-doped concentration ~1.0%,with the high mobility μ~45.5 cm2·V-1·s-1 and the carrier concentration n~3.74×1 020 cm-3.The optimized transmittance of IMWO films is ~76%(including float glass,i.e.,glass/IMWO) with the light wavelength between 400 nm and 1 100 nm.更多还原