【摘要】 在Si衬底上磁控溅射制备AlxZn1-xO(AZO)合金薄膜,在其上真空蒸发Ni/Au叉指电极获得金属-半导体-金属(MSM)结构光电探测器。采用UV-Vis-Nir分光光度计测量AZO系列薄膜的光吸收特性,观察到AZO合金薄膜的光学吸收带边随Al含量增加明显蓝移。测试AZO探测器的电流-电压特性、时间特性和响应光谱发现,随Al含量的增加,紫外光照下的电流-电压曲线呈现出明显的非线性特征,且光响应时间显著变小;30at.%Al含量样品在5 V偏压下暗电流为14 nA,光暗电流比达到10倍,上升时间和下降时间都小于1 s;Al含量为5 at.%时获得光电导型紫外光电探测器,而Al含量为30 at.%时获得紫外增强型Si探测器,其响应光谱变宽为0.3~1.0μm。更多还原

【Abstract】 AlxZn1-xO(AZO)alloy thin films were deposited on Si substrates by RF magnetron sputtering,and photodetectors were fabricated on these AZO thin films by using Ni/Au as contact metal,forming a metal-semiconductormetal(MSM) structure with interdigital(IDT) configuration.Optical transmission spectra tested by a UV-Vis-Nir spectrometer indicate that the absorption edge has obvious blue shift with Al concent increasing.I-V characteristics,time response and spectra response of the detectors were investigated.With Al content increasing,I-V characteristics of the photodetectors under UV illumination exhibit stronger barrier effect and response time decreases dramatically.For the samples with 30 at.% Al,the rise time and fall time are within 1 s,the dark current is measured to be ～14 nA,and the light and dark current ratio is about 10 under the 5 V bias.The ranges of response spectra of 5 at.% Al samples and 30 at.% Al samples are about 0.3-0.4 μm and 0.3-1.0 μm,respectively.更多还原