【摘要】 采用高温熔渗法制备钨铜电子封装材料,在850℃下对该材料进行模锻,通过扫描电镜(SEM)观察材料的微观组织,并利用超声波块体扫描仪探测材料内部的孔隙分布情况,研究高温模锻对钨铜电子封装材料组织和性能的影响。结果表明:在850℃高温模锻能显著减少钨铜电子封装材料内部的孔洞缺陷,内部组织更均匀、致密。经1次高温模锻后,相对密度达到99.5%,气密性由锻造前的27×10-10(Pa-m3)/s提高到3.5×10-10(Pa-m3)/s,导热系数从181.0 W/(m-K)提高至195 W/(m-K)。增加锻造次数对密度影响有限,材料性能变化不大。更多还原

【Abstract】 W-Cu heat sinks were prepared by high temperature infiltration and the infiltrated blanks were impact forged at 850 ℃.The microstructure of W-Cu heat sinks was observed by SEM and the distribution of the pore inside the heat sinks was detected by the Bulk-Scanning,which studied the effect of high temperature forging process on the microstructure and properties of W-Cu heat sinks.The results show that high temperature forging can obviously reduce the porosity defects and prompt the densification and obtain more uniform microstructure of W-Cu heat sink.The hermeticity is increased from 2.7×10-10 Pa?m3/s to 3.5×10-10 Pa?m3/s and thermal conductivity is increased from 181.0 W/(m?K) to 195W/(m? K) and 99.5% relative density is achieved.But there is almost no change on the properties by adding the forging times.更多还原