【摘要】 制备了两种以SiO2为绝缘层的底栅ZnO薄膜晶体管,分别以未退火和退火处理的ZnO薄膜作为有源层。与未退火处理的ZnO薄膜晶体管相比,退火处理的ZnO薄膜晶体管的饱和迁移率由2.3 cm2/(V.s)增大至3.12 cm2/(V.s),阈值电压由20.8 V减小至9.9 V,亚阈值摆幅由2.6 V/dec减小至1.9 V/dec。25 V直流电压施加3 600 s后,未退火器件的阈值电压变化达到8 V,而退火处理的器件的阈值电压变化仅为3.4V。实验结果表明,对有源层退火处理有利于提升ZnO-TFT器件的电学性能和偏压稳定性。更多还原

【Abstract】 The bottom gate thin-film transistors(TFTs) with un-annealed and annealed ZnO film as a channel layer were fabricated.Compared with the un-annealed device,the performance of the device with annealed ZnO had been improved.The saturation mobility increased from 2.3 to 3.12 cm2/(V·s),the threshold voltage reduced from 20.8 to 9.9 V,the threshold swing varied from 2.6 to 1.9 V/dec,and the threshold voltage shifted from 8.0 to 3.4 V after applying a gate bias stress of 25 V for 3 600 s.The experimental results indicate that using annealed ZnO film as channel layer is an effective approach for improving ZnO-based TFT performance and bias stress stability.更多还原