【摘要】 SONOS(Silicon-Oxide-Nitride-Oxide-Silicon)型非易失性存储器件的电荷保持能力与Si-SiO2界面态的质量密切相关。通过在SONOS的隧穿氧化层工艺流程中增加适当的N2O退火工艺,改善了器件的擦除深度和编程速度,从而使得SONOS器件的存储器性能得到优化。通过进一步电荷泵测试表明,电荷泵电流值Icp由1.8×10-6A减小到1.3×10-6A,减小27.8%,即隧穿氧化层与衬底之间的界面态显著减少。因此,在SONOS工艺中增加适当的N2O退火工艺,能有效地优化存储器的存储能力,提高SONOS存储性能。更多还原

【Abstract】 The quality of the Si-SiO2 interface is associated with the long-term retention in polysilicon-oxide-nitride-oxide-silicon(SONOS)nonvolatile semiconductor memory(NVSM)devices [1].We improve the storage capability of SONOS nonvolatile semiconductor memory,including lower erase depth,faster program speed,by adding proper anneal process after tunnel oxide deposition.From further charge pump test,charge pump current(Icp)decreases from 1.8×10-6 A to 1.3×10-6 A,decreased by 27.8%.This phenomenon shows the interface states between tunnel oxide and substrate are decreased obviously.As a conclusion,the process of N2O anneal can optimize the storage capability of SONOS nonvolatile semiconductor memory effectively.更多还原