【摘要】 首先建立了线性变掺杂高阻漂移区LDMOS的导通电阻的模型,通过分析、计算,得出它的导通电阻的解析表达式,然后用MATLAB软件和MEDICI软件对总导通电阻和各部分电阻进行模拟。经过讨论,得出其性能优于均匀掺杂高阻漂移区LDMOS的结论。更多还原

【Abstract】 First,the model of the on-resistance of linearly-varying-doping drift-region LDMOS is established,through analyzing and calculating,the analytic expression of its on-resistance was worked out.Then MATLAB and MEDICI software are used to simulate the total and each part of on-resistance.After analysis,it is concluded that the performance of linearly-varying-doping drift-region LDMOS is better than symmetrical-doping frift-region LDMOS.更多还原