【摘要】 采用射频等离子体增强化学气相沉积(RF-PECVD)方法制备非化学计量比氢化非晶碳化硅(a-SiC:H)薄膜材料,借助紫外可见(UV-Vis)光谱、激光拉曼(Raman)光谱和傅里叶变换红外(FTIR)光谱等手段,研究了p-i-n型非晶硅(a-Si:H)薄膜太阳能电池p层a-SiC:H薄膜材料的制备与光学性能.研究结果表明甲烷和硅烷掺杂比能影响a-Si:H薄膜成键情况,而射频功率一定程度上能影响薄膜沉积速率,该研究结果可为制备转换效率高、性能稳定的p-i-n型非晶硅薄膜太阳能电池提供支持.更多还原

【Abstract】 Non-stoichiometry hydrogenated amorphous silicon carbide(a-SiC:H) thin films were deposited by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD).The fabrication and optical properties of p-type layer in p-i-n film cells based on amorphous silicon were investigated by means of ultraviolet-visible(UV-Vis),laser Raman and Fourier transform infrared(FTIR) spectroscopy,respectively.The results show that CH4 and SiH4 flow ratios can affect the bonding of a-SiC:H thin film,and radio-frequency power can affect the deposition rate of the thin layer to some extent.The research results can give practical support for the application of p-i-n film cells based on amorphous silicon with high energy transfer efficiency and stable optical properties.更多还原