节点文献

半导体量子点中杂质结合能的理论研究

Theoretical Study on the Binding Energy of Hydrogenic Impurities in a Semiconductor Quantum Dot

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 魏国柱李媛公卫江范爽

【Author】 WEI Guo-zhu,LI Yuan,GONG Wei-jiang,FAN Shuang School of Sciences,Northeastern University,Shenyang 110819,China.

【机构】 东北大学理学院

【摘要】 利用一维有限差分法,计算了一个圆柱形量子点中杂质基态的结合能,研究了电场、磁场和杂质位置对结合能的影响.当杂质位于量子点中心时,结合能随着电场和有效半径的增加而减小;当杂质位于过量子点中心且垂直于轴线的平面上时,结合能随杂质位置远离中心的变化呈对称变化;当杂质位于z轴上时,在电场的作用下这种对称性消失.

【Abstract】 The binding energy of hydrogenic impurities in a cylindrical quantum dot was calculated with the one-dimensional finite-difference method.The effects of the electric field,magnetic field and position of an impurity on the binding energy were studied.When the impurity is located at the center of the quantum dot,the binding energy decreases with increasing electric field and effective radius,and when the impurity is located at the plane normal to the z axis and through the center of the quantum dot,the binding energy changes symmetrically with increasing distance away from the center of the quantum dot.However,when the impurity is located on the z axis,the symmetry vanishes because of the effect of the electric field.

【基金】 国家自然科学基金资助项目(10847109)
  • 【文献出处】 东北大学学报(自然科学版) ,Journal of Northeastern University(Natural Science) , 编辑部邮箱 ,2011年08期
  • 【分类号】O471.1
  • 【被引频次】1
  • 【下载频次】131
节点文献中: 

本文链接的文献网络图示:

本文的引文网络