【摘要】 采用高真空磁控溅射技术制备出无缓冲层NiFe/CoFe/Cu/CoFe/IrMn/Cu结构的自旋阀磁电阻薄膜。采用标准四探针法对自旋阀磁电阻比进行了测试,并利用振动样品磁强计(VSM)测量了样品的磁滞回线。结果表明:采用复合自由层NiFe/CoFe结构有效地提高了巨磁电阻比,相对于单一自由层结构自旋阀,巨磁电阻(GMR)从2.48%提高到3.3%。复合自由层NiFe/CoFe的引入明显降低了自旋阀体系的矫顽力。更多还原

【Abstract】 The spin vavle structure magnetoresistance of buffer-layer-free NiFe/CoFe/Cu/CoFe/IrMn/Cu was fabricated using high vacuum magnetron sputtering technology.The magnetoresistance ratio of spin valve was measured by standard four-point method,and the hysteresis loop of the samples was measured by using vibrating sample magnetometer(VSM).Results revealed that composite free layer NiFe/CoFe structure can improve the giant magnetoresistance ratio efficiently.Compared with single free layer structure spin valve,the giant magnetoresistance has been increased from 2.48% to 3.3%.Composite free layer NiFe/CoFe significantly reduces the coercivity of the spin valve system.更多还原