【摘要】 采用微波等离子体化学气相法合成的金刚石膜质量好,但采用常规CH4-H2反应气体体系,金刚石膜的沉积速率较慢。为此,实验研究了C2H5OH-H2、CH3COCH3-H2等含氧体系下碳源浓度、微波功率、气体压力对金刚石膜沉积速率、表面形貌、电阻率的影响。结果表明,使用C2H5OH-H2、CH3COCH3-H2等含氧体系,金刚石膜的生长速率可达0.6μm/h以上,较常规CH4-H2体系提高1倍以上,并且金刚石膜的纯度高(80%以上)、晶型好、电阻率高。引入含氧碳源是一种提高金刚石膜沉积速率的有效方法。更多还原

【Abstract】 The diamond films with excellent qualities were successfully synthesized by microwave plasma che-mical vapor deposition(MPCVD).However,the growth rate of diamond film is very slow with the conventional system of CH4-H2.In order to improve its growth rate,the processes and mechanisms of improving its deposition rate and qualities were studied by introducing into various oxygen-containing compounds,such as C2H5OH,CH3COCH3,etc..The influence of different microwave power,concentration of carbon radicals and gas pressure on the resistivity,growth rate and surface morphology of diamond films were studied.The results show that with the gas systems containing oxygen,the growth rate of diamond film is up to 0.6μm/h,which at least doubles that with the CH4-H2 system,and the diamond film is of high purity(more than 80%) and resistivity.Accordingly,the addition of oxygen-containing gas is an available way to improve the growth rate.更多还原