【摘要】 以纯度为99.9%的98%（质量分数）ZnO、2%（质量分数）Al₂O₃陶瓷靶为溅射靶材,采用射频磁控溅射法在玻璃衬底上制备了Al₂O₃掺杂的ZnO薄膜。采用X射线衍射仪、扫描电子显微镜、紫外可见光谱仪等方法测试和分析了不同衬底温度、溅射偏压以及退火工艺对ZAO薄膜形貌结构、光电学性能的影响。结果表明,在衬底温度200℃、溅射时间30min、负偏压60V、退火温度300℃时制得的薄膜的可见光透过率为81%,最低电阻率为9.2×10^-1Ω·cm。更多还原

【Abstract】 In general,flat surface zinc oxide thin films without textured structure are grown via magnectron sputtering methods.High purity metallic ZnO（99.9%） and 2wt%Al₂O₃ used as source materials,textured surface aluminum oxidedoped zinc oxide（ZAO） thin films were prepared by radio frequency（RF） magnetron reactive sputtering on common floating glass.The influence of different substrate temperatures,sputtering bias-voltages,annealing technologies on the microstructure,photoelectric properties properties of ZnO films was investigated by using X-ray diffraction（XRD）,scanning electron microscope（SEM） and UV-visible spectrophotometer（UV-Vis）.The results show that the film prepared at the substrate temperature of 200℃,sputtering time of 30min,bias-voltage of 60V,annealing temperature of 300℃exhibites a lowest resistivity of 9.2×10^-4Ω·cm and average transmittance of over 81% in visible range.更多还原