【摘要】 以分析纯SnCl2.2H2O和PdCl2为主要原料,控制不同n(Pd2+)/n(Sn2+),利用溶胶凝胶-浸渍提拉法制备了Pd掺杂SnO2纳米膜。用XRD、AFM对样品的结构、形貌进行了分析,并测试了Pd掺杂SnO2纳米膜的阻温特性和对H2敏感性能。结果表明,Pd掺杂SnO2纳米膜平整而致密,表面椭球形粒子颗粒尺寸约为20nm;Pd掺杂SnO2为金红石型晶体结构,但Pd2+进入SnO2晶格代替八面体中部分Sn4+,导致其晶胞参数比未掺杂SnO2略小;Pd掺杂SnO2纳米膜的电阻随温度升高而减小,表现出n型半导体阻温特性;随着Pd掺杂比例的增大,元件的电阻增大,其对H2的灵敏度先增大后减小,当掺杂比例为1%时对H2灵敏度最高。更多还原

【Abstract】 Pd-doped SnO2 thin films were prepared by sol-gel method and dip-coating process with analytically pure SnCl2·2H2O and PdCl2 at different n(Pd2+)/n(Sn4+) ratios.The phase transformation,structure and shape of samples were analyzed according to XRD and AFM.The resistance-temperature character and sensitivity in H2 atmosphere of the sensors were tested.The result indicated that Pd-doped SnO2 thin films were smooth and compact,and the size of superficial ellipsoidal particle was about 20nm.The crystal structure of Pd-doped SnO2 was rutile type.The cell parameters of Pd-doped SnO2 were a few smaller than that of pure SnO2 for Pd2+ entered into crystal lattice of SnO2 instead of Sn4+ in octahedron.The resistance of Pd-doped SnO2 decreased with temperature increasing and that showed n-type semiconductor resistance temperature characteristics.With Pd doping ratio increased,the components of the resistance increased,the sensitivity of the H2 then decreased when the doping ratio of 1%,the highest sensitivity of the H2.更多还原