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异质外延ZnO掺Ag薄膜及其异质结紫外光特性的研究

The Heteroepitaxy of Ag-doped ZnO Film and Study on UV Characteristics of Heterojunction

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【作者】 李大伟蒋向东谢康曹东

【Author】 LI Dawei,JIANG Xiangdong,XIE Kang,CAO Dong(School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054)

【机构】 电子科技大学光电信息学院

【摘要】 采用射频磁控溅射方法在ITO基片上外延掺Ag的ZnO薄膜,分别用XRD、SEM和紫外可见光分光光度计表征外延薄膜结构、形貌和光学性质。ZnO∶Ag/ITO薄膜伏安特性的研究表明,ZnO∶Ag与ITO形成异质结。在紫外光波长365nm、负偏压15V情况下异质结暗电流为11.2nA,光电流为198nA,灵敏度(光电流与暗电流之比)为17.7。此异质结的紫外光响应上升时间为700ms,下降时间为1.5s。

【Abstract】 Ag-doped zinc oxide(ZnO∶Ag)films were prepared on ITO substrates by radio frequency magnetron sputtering technique(RF).The structure,surface morphology and optical property of the epitaxial film were investigated by XRD,SEM and UV-Vis spectrum separately.The study of I-V characteristics of ZnO∶AgTO films indicate that ZnO∶Ag and ITO form heterojunction.Under a reverse bias of 15V and 365nm UV,the photocurrent and dark current of the heterojunction are 11.2nA and 198nA,respectively.So,sensitivity is 17.7.UV response of the heterojunction has a fast rise time of 700ms and a fall time of 1.5s.

【基金】 四川省应用基础项目(07JY029-087)
  • 【分类号】TN304.2
  • 【被引频次】2
  • 【下载频次】151
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