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β-CaSiO3晶体的电子结构及光学性质

Study on the Electronic Structure and Optical Properties of β-CaSiO3

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【作者】 何茗张树人周晓华李波张婷

【Author】 HE Ming1,2,ZHANG Shuren1,ZHOU Xiaohua1,LI Bo1,ZHANG Ting3 (1 State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technologyof China,Chengdu 610054;2 Electromechanical Engineering Department,Chengdu Electromechanical College,Chengdu 610031;3 Teaching and Research Section of Physics,Chengdu Medical College,Chengdu 610081)

【机构】 电子科技大学电子薄膜与集成器件国家重点实验室成都电子机械高等专科学校电气与电子工程系成都医学院人文信息管理学院

【摘要】 基于第一性原理的平面波赝势方法(PWP)的局域密度近似(LDA)/广义梯度近似(GGA)计算了β-Ca-SiO3的几何结构、能带结构、态密度和光学性质。其晶胞参数优化结果与实验相比,LDA/GGA的相对误差为-3.62%/1.91%。对优化后的β-CaSiO3晶体进行能带结构分析表明,β-CaSiO3晶体为间接带隙结构,禁带宽度Eg(LDA)=5.53eV,Eg(GGA)=5.18eV。对态密度图及Mulliken电荷分布的分析表明,Ca的d轨道有电子分布,即Ca的s、p、d轨道均参与了成键。β-CaSiO3晶体中Ca与SiO3基团之间形成的化学键主要是离子键,而Si与O之间的化学键是共价键。

【Abstract】 A first-principles pseudopotential plane-wave method based on LDA/GGA method of density functional theory was used to investigate the geometry structures,band structures,density of states and optical properties of β-CaSiO3.The results show that the lattice parameter of optimization is only-3.62%/1.91%(relative error(RE)) within the LDA/GGA method compared with the experimental results.Based on the analysis of the band structure of optimized β-CaSiO3 crystal with LDA/GGA approximation,it is found that indirect band gaps are 5.53eV/5.18eV.Analyses of density of states and Mulliken electron population show that there is charge distribution in the d orbit of calcium atom,which means the s,p,d orbit of calcium participate in bonding.In β-CaSiO3,the ionic bond is formed between Ca and SiO3,while the covalent bond is formed between Si and O.

【关键词】 β-CaSiO3能带结构电荷分布价键
【Key words】 β-CaSiO3band structurecharge distributionvalence-bond
【基金】 装备预研基金重点项目(9140A12011710D20252)
  • 【分类号】TB303
  • 【下载频次】163
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