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Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure

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【作者】 王永顺； 冯晶晶； 刘春娟； 汪再兴； 张彩珍； 常鹏；

【Author】 Wang Yongshun~(1,+),Feng Jingjing~1,Liu Chunjuan~1, Wang Zaixing~1,Zhang Caizhen~1,and Chang Peng~2 1 School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China 2 School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China

【机构】 School of Electronic and Information Engineering,Lanzhou Jiaotong University； School of Physical Science and Technology,Lanzhou University；

【摘要】 <正>The failure of a bipolar static induction transistor(BSIT) often occurs in the transient process between the conducting-state and the blocking-state,so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices.The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper.The influences of material,structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth.The technological approaches are developed to improve the dynamical characteristics of BSITs.

【Abstract】 The failure of a bipolar static induction transistor(BSIT) often occurs in the transient process between the conducting-state and the blocking-state,so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices.The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper.The influences of material,structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth.The technological approaches are developed to improve the dynamical characteristics of BSITs.

【关键词】 bipolar static induction transistor； dynamical parameters； transient processes； potential barrier； power consumption；
【Key words】 bipolar static induction transistor； dynamical parameters； transient processes； potential barrier； power consumption；
【基金】 supported by the Scientific and Technological Supporting Program of Gansu Province,China(No.097GKCA052);the Foundamental Research Funds for the Central Universities(No.lzujbky-2009-14)
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2011年11期
  • 【分类号】TN32
  • 【被引频次】2
  • 【下载频次】38
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