Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi₂ layer synthesized by ion implantation

【摘要】 <正>The calculation results of the surface plasmon（SP） energy and Purcell factor of ZnO/NiSi₂ demonstrate the possibility of using NiSi₂ to enhance the UV emission of ZnO by SP coupling.Experimentally,ZnO films were deposited on NiSi₂ layers synthesized by ion implantation,and the roughness of the NiSi₂ layers spans a large range from 3 to 38 nm,providing favorable conditions for investigating SP-mediated emission.An 11-fold emission enhancement from the ZnO film on the roughest NiSi₂ layer was obtained,which indicates the possibility that metal silicide layers can be used both as an electrical contact and for emission enhancement.更多还原

【Abstract】 The calculation results of the surface plasmon（SP） energy and Purcell factor of ZnO/NiSi₂ demonstrate the possibility of using NiSi₂ to enhance the UV emission of ZnO by SP coupling.Experimentally,ZnO films were deposited on NiSi₂ layers synthesized by ion implantation,and the roughness of the NiSi₂ layers spans a large range from 3 to 38 nm,providing favorable conditions for investigating SP-mediated emission.An 11-fold emission enhancement from the ZnO film on the roughest NiSi₂ layer was obtained,which indicates the possibility that metal silicide layers can be used both as an electrical contact and for emission enhancement.更多还原