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A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs

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【作者】王洪来；张小兴；戴宇杰；吕英杰； Toshimasa Matsuoka； Kenji Taniguchi；

【Author】 Wang Honglai,Zhang Xiaoxing,Dai Yujie,L Yingjie Toshimasa Matsuoka~2,Wang Jun~2,and Kenji Taniguchi~2 1 Institute of Microelectronics,Nankai University,Tianjin 300457,China 2 Department of Electrical,Electronic and Information Engineering,Osaka University,2-1 Yamadaoka,Suita, Osaka,565-0871,Japan

【机构】 Institute of Microelectronics,Nankai University； Department of Electrical,Electronic and Information Engineering,Osaka University,2-1 Yamadaoka,Suita,Osaka,565-0871,Japan；

【摘要】 <正>This paper describes a CMOS voltage reference using only resistors and transistors working in weak inversion,without the need for any bipolar transistors.The voltage reference is designed and fabricated by a 0.18μm CMOS process.The experimental results show that the proposed voltage reference has a temperature coefficient of 370 ppm/℃at a 0.8 V supply voltage over the temperature range of-35 to 85℃and a 0.1%variation in supply voltage from 0.8 to 3 V.Furthermore,the supply current is only 1.5μA at 0.8 V supply voltage.更多还原

【Abstract】 This paper describes a CMOS voltage reference using only resistors and transistors working in weak inversion,without the need for any bipolar transistors.The voltage reference is designed and fabricated by a 0.18μm CMOS process.The experimental results show that the proposed voltage reference has a temperature coefficient of 370 ppm/℃at a 0.8 V supply voltage over the temperature range of-35 to 85℃and a 0.1%variation in supply voltage from 0.8 to 3 V.Furthermore,the supply current is only 1.5μA at 0.8 V supply voltage.更多还原

【关键词】 bandgap reference； CMOS； subthreshold；
【Key words】 bandgap reference； CMOS； subthreshold；

【文献出处】半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2011年08期

【分类号】TN432
【被引频次】7
【下载频次】141

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