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Growth of pure zinc blende p-type GaAs nanowires by metal-organic chemical vapor deposition

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【Author】 Li Ran~+,Huang Hui,Ren Xiaomin~1,Guo Jingwei Liu Xiaolong~1,Huang Yongqing and Cai Shiwei 1 Key Laboratory of Information Photonics and Optical Communications,Ministry of Education,Beijing University of Posts and Telecommunications,Beijing 100088,China 2 Electronics Science and Technology Institute,Dalian University of Technology,Dalian 116085,China

【机构】 Key Laboratory of Information Photonics and Optical Communications,Ministry of Education,Beijing University of Posts and Telecommunications； Electronics Science and Technology Institute,Dalian University of Technology；

【摘要】 <正>Vertical p-type gallium arsenide（GaAs） nanowires with pure zinc blende structure were grown on GaAs （111） B substrate by metal-organic chemical vapor deposition via a Au-catalyst vapor-liquid-solid mechanism.The p-type doping was investigated by additional diethyl zinc（DEZn）.In the highⅡ/Ⅲratio range（Ⅱ/Ⅲ>9.1%）,there exists a critical length beyond which kinking takes place.Two possible reasons are discussed.Zn occurrence in the nanowires was verified by energy dispersive X-ray（EDX） analysis.Corresponding toⅡ/Ⅲ= 0.2%,the doping concentration is about 8×10¹⁸ cm^-3.更多还原

【Abstract】 Vertical p-type gallium arsenide（GaAs） nanowires with pure zinc blende structure were grown on GaAs （111） B substrate by metal-organic chemical vapor deposition via a Au-catalyst vapor-liquid-solid mechanism.The p-type doping was investigated by additional diethyl zinc（DEZn）.In the highⅡ/Ⅲratio range（Ⅱ/Ⅲ>9.1%）,there exists a critical length beyond which kinking takes place.Two possible reasons are discussed.Zn occurrence in the nanowires was verified by energy dispersive X-ray（EDX） analysis.Corresponding toⅡ/Ⅲ= 0.2%,the doping concentration is about 8×10¹⁸ cm^-3.更多还原

【关键词】 GaAs nanowire； p-type doping； metal organic chemical vapor position； zinc-blende structure；
【Key words】 GaAs nanowire； p-type doping； metal organic chemical vapor position； zinc-blende structure；

【基金】 Project supported by the National Basic Research Program of China(No.2010CB327601);the Key International Cooperation Research Project of the National Natural Science Foundation of China(No.90201035);the Chinese Universities Scientific Fund(No. BUPT2009RC0410);the National Natural Science Foundation of China(No.61077049);the 111 Program of China(No.B07005).

【文献出处】半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2011年05期

【分类号】TN304.055
【被引频次】4
【下载频次】67

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