【摘要】 采用射频等离子体化学增强型气相沉积(rF-PECVD)法沉积了掺氮氟化非晶碳膜.研究了不同射频功率下薄膜样品表面形貌及I-U特性,比较了试样I-U曲线的对称性及零点漂移;分析了直接沉积及硅陈列沉积下膜场发射电流的重复稳定性的差异;研究了不同掺氮流量比下沉积薄膜的Fower-Nord-heim曲线.研究结果表明,氮氟化非晶碳膜是良好的冷阴极发射材料.射频功率的提升,有利于薄膜质量和性能改善;硅陈列沉积FN-DLC膜场测试的场发射电流的重复性能较直接沉积的更加稳定优良;F-N曲线基本为直线,掺氮氟化非晶碳膜的场发射为冷阴极发射,逸出功随着含氮量的升高而增大.更多还原

【Abstract】 Nitrogen doped fluorinated carbon films were deposited by plasma enhanced chemical vapor deposition.Surface morphology and I-V characteristics of the thin film samples were studied under different RF powers.The symmetry and zero drift of the I-V characteristics of the films were compared.Repeatability and stability of the field emission current of the films deposited directly and deposited on silicon array were analyzed.Fower-Nordheim curves of the samples at different nitrogen doping were compared and researched.The results show that FN-DLC films were good launching cold cathode materials,and the quality and the performance of the thin films were improved with the enhancement of RF power.The stability of the field emission current of the films deposited on silicon array was more stable and more excellent than the films deposited directly.F-N curves of the thin films were nearly straight lines,the field emission of the FN-DLC thin films were cold cathode fired and the work function increased as the nitrogen doping increased.更多还原