【摘要】 采用直流磁控溅射工艺于200℃的玻璃基板制备了大面积AZO透明导电薄膜。重点研究了样品晶体结构、方阻、可见光透过率、样品形貌等随其位置变化的情况。研究表明,大面积AZO薄膜的晶体结构、可见光透过率、样品形貌等随样品位置变化比较小,大面积AZO样品均按C轴取向生长,表面平整,晶粒尺寸为20 nm左右。在本实验条件下获得的大面积AZO薄膜方阻在86～110Ω/□范围内,方阻线性变动率为28%,样品电阻率为6.34～7.26×10-4Ω·cm,可见光平均透过率均高于87%。更多还原

【Abstract】 Large-area AZO thin films have been deposited on glass substrate by DC magnetron sputtering at 200℃.The effect of sample spatial location on the structural,electrical,optical properties and morphology of the AZO thin films were investigated.It was found that all AZO thin films grow with c-axis orientation of the hexagonal ZnO phase normal to the substrate,the surface of AZO thin films are smooth,and the grain size is around 20nm.The sheet resistance of large-area AZO thin film obtained in the testing is in a range of 86～110Ω/□;change rating of sheet resistance is 28%;resistivity lies in 6.34～7.26×10-4 Ω.cm;the average visible transmittance is higher than 87%.更多还原