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氦注入铝的热解吸谱

Thermal Desorption Spectroscopy Study of Helium-Implanted Aluminum

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【作者】 向鑫陈长安刘柯钊饶咏初彭丽霞

【Author】 Xiang Xin,Chen Chang’an,Liu Kezhao,Rao Yongchu,Peng Lixia(National Key Laboratory for Surface Physics and Chemistry,Mianyang 621907,China)

【机构】 表面物理与化学国家重点实验室

【摘要】 用氦热解吸谱(THDS)研究了10keV,4.0×1017cm-2剂量He+辐照(200)择优取向Al的氦热解吸行为及其与升温速率的关系。结果显示,He解吸开始于270℃附近,THDS中无干扰峰存在。He解吸行为与升温速率密切相关,其解吸峰个数及峰位随升温速率的变化而改变,且不遵循通常的一级化学反应模型,而可能是多级或一级与多级化学反应的混合模型。

【Abstract】 Helium was implanted into the high purity aluminum samples with preferred orientation of(200),under the conditions of beam energy of 10keV and a helium dosage of 4.0×1017 ions cm-2.The helium thermal desorption behavior of the He-implanted Al samples and its dependence on the heating rate were evaluated with thermal desorption spectroscopy(THDS).The results show that the on-set of He desorption is about 270℃,and no spurious peak can be observed in its THDS spectra.The heating rate significantly affects the number of THDS peaks,and the peak temperature positions,deviating from the widely accepted first-order chemical reaction model.Possible mechanisms were tentatively explained.

【关键词】 Al氦热解吸谱干扰峰升温速率解吸模型
【Key words】 AluminumTHDSSpurious peaksHeating rateDesorption model
【基金】 国家自然科学基金资助项目(50671017)
  • 【文献出处】 真空科学与技术学报 ,Chinese Journal of Vacuum Science and Technology , 编辑部邮箱 ,2010年02期
  • 【分类号】TL341
  • 【下载频次】70
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