【摘要】 采用射频磁控溅射法在石英玻璃衬底上制备了性能良好的透明导电ZnO:Al薄膜,并研究了衬底温度和氢气退火对薄膜结构和光电性能的影响。结果表明,衬底加热可以改善薄膜结晶质量和c轴择优取向,减小内应力,并提高其电学性能。经稀释氢气退火后,500℃沉积的薄膜电阻率由9.4×10-4Ω.cm减小到5.1×10-4Ω.cm,迁移率由16.4cm2.V-1.s-1增大到23.3 cm2.V-1.s-1,载流子浓度由4.1×1020cm-3提高到5.2×1020cm-3,薄膜的可见光区平均透射率仍达85%以上。禁带宽度随着衬底温度的升高和氢气退火而展宽。更多还原

【Abstract】 The transparent conductive ZnO:Al films were grown by RF magnetron sputtering on quartz substrates.The influence of the film growth conditions,such as the substrate temperature,and annealing in low hydrogen partial pressure,on the microstructures and properties of the ZnO:Al film was studied.The results show that the substrate temperature and hydrogen annealing strongly affect the crystal structure and properties of the films.For instance,after annealing in dilute hydrogen,the resistivity of the films,grown at 500℃,decreased from 9.4×10-4Ω·cm to 5.1×10-4Ω·cm;its mobility increased from 16.4 cm2·V-1·s-1 to 23.3 cm2·V-1·s-1;and its carrier concentration increased from 4.1×1020cm-3 to 5.2×1010cm-3.The transmitance in the visible region was found to be higher than 85%.Interesting finding is that the hydrogen annealing and an increase of the substrate temperature widens the band gap of the ZnO:Al films.更多还原