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磁控溅射沉积二氧化钒薄膜及其电致相变特性研究
VANADIUM DIOXIDE THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING AND ITS PHASE TRANSITION INDUCED BY ELECTRIC-FIELD
【摘要】 采用反应射频磁控溅射技术在熔融石英玻璃衬底上制备了组分单一的二氧化钒薄膜。在制备好的二氧化钒薄膜上使用半导体工艺制备了金属叉指电极,通过半导体测试仪测试其电致相变特性。结果表明,当电极上所加电压达到一定阈值时电流发生突变,即薄膜发生半导体-金属相变。
【Abstract】 vanadium dioxide thin films on fused quartz glass have been prepared directly by reactive magnetron sputtering methods.The electrodes were fabricated on the thin films using well-established semiconductor techniques,and an abrupt semiconductor-metal phase transition(SMPT) was observed in vanadium thin films when a static voltage applied onto the electrodes.
【关键词】 二氧化钒、薄膜;
电致相变;
【Key words】 vanadium dioxide; thin film; semiconductor-metal phase transition(SMPT);
【Key words】 vanadium dioxide; thin film; semiconductor-metal phase transition(SMPT);
- 【文献出处】 真空与低温 ,Vacuum and Cryogenics , 编辑部邮箱 ,2010年01期
- 【分类号】O484.42
- 【被引频次】4
- 【下载频次】396