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Preparation of size controllable copper nanocrystals for nonvolatile memory applications

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【Author】 Wang Li, Sun Hong-Fang, Zhou Hui-Hua, and Zhu Jing Beijing National Center for Electron Microscopy, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

【机构】 Beijing National Center for Electron Microscopy, Department of Materials Science and Engineering, Tsinghua University；

【摘要】 A method of fabricating Cu nanocrystals embedded in SiO2 dielectric film for nonvolatile memory applications by magnetron sputtering is introduced in this paper. The average size and distribution density of Cu nanocrystal grains are controlled by adjusting experimental parameters. The relationship between nanocrystal floating gate micro-structure and its charge storage capability is also discussed theoretically.更多还原

【Abstract】 A method of fabricating Cu nanocrystals embedded in SiO2 dielectric film for nonvolatile memory applications by magnetron sputtering is introduced in this paper. The average size and distribution density of Cu nanocrystal grains are controlled by adjusting experimental parameters. The relationship between nanocrystal floating gate micro-structure and its charge storage capability is also discussed theoretically.更多还原

【关键词】 nanocrystal grain； nonvolatile memory； Coulomb blockade effect； magnetron sputtering；
【Key words】 nanocrystal grain； nonvolatile memory； Coulomb blockade effect； magnetron sputtering；

【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2010年10期

【分类号】TB383.1
【下载频次】11

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